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Issue
Korean Journal of Chemical Engineering,
Vol.22, No.6, 822-829, 2005
Run-to-Run Control of Inductively Coupled C2F6 Plasma Etching of SiO2: Construction of a Numerical Process with a Computational Fluid Dynamics Code
Seo ST, Lee YH, Lee KS, Choi BK, Yang DR
A numerical process to simulate SiO2 dry etching with inductively coupled C2F6 plasmas has been constructed using a commercial CFD code as a first step to design a run-to-run control system. The simulator was found to reasonably predict the reactive ion etching behavior of C2F6 plasmas and used to investigate the effects of plasma operating variables on the etch rate and uniformity. The relationship between the operating variables and the etching characteristics was mathematically modeled through linear regression for future run-to-run control system design.
Keywords: ICP Etcher; C2F6 Plasmas; SiO2 Etching; Run-to-Run Control
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[Cited By]
  1. Seo ST, Lee KS, Yang DR, Korean Journal of Chemical Engineering, 23(2), 199, 2006
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