Korean Journal of Chemical Engineering, Vol.22, No.5, 793-796, 2005
Submicron Patterning of Ta, NiFe, and Pac-man Type Ta/NiFe/Ta Magnetic Elements
Submicron patterning of Ta, NiFe, and Pac-man type magnetic elements of Ta/NiFe/Ta has been carried out in inductively coupled plasmas (ICPs) of Cl2/Ar. Etch behavior was quite dependent on materials and plasma parameters. An ion-enhanced etch mechanism played a critical role for desorption of metal chloride etch products. Sidewall contamination with etch products was observed at a higher Cl2 concentration (>50%). Compared to relatively damaged surfaces and profiles by the ion milling method, the ICP etching technique produced clear, smooth, and well-defined Pac-man type elements.
[References]
Cho HG, Kim YK, Lee SR, J. Korean Phys. Soc. , 41 , 753, 2002
Cho H, Lee KP, Jung KB, Pearton SJ, Marburger J, Sharifi F, Hahn YB, Childress JR, J. Appl. Phys. , 87 , 6397, 2000
Fang TN, Zhu JG, J. Appl. Phys. , 87 , 7061, 2000
Gokan H, Esho S, J. Vac. Sci. Technol. , 18 , 23, 1981
Hahn YB, Hays DC, Cho H, Jung KB, Abernathy CR, Donovan SM, Pearton SJ, Han J, Shul RJ, Mater. Sci. Eng , B60 , 95, 1999
Hahn YB, Hays DC, Cho H, Jung KB, Abernathy CR, Pearton SJ, Appl. Surf. Sci. , 147 , 207, 1999
Hahn YB, Pearton SJ, Korean J. Chem. Eng. , 17 (3), 304, 2000
Im YH, Choi CS, Hahn YB, J. Korean Phys. Soc. , 39 , 617, 2001
Jung KB, Cho H, Hahn YB, Hays DC, Lambers ES, Park YD, Feng T, Childress JR, Pearton SJ, J. Vac. Sci. Technol. A , 17 (4), 2223, 1999
Jung KB, Cho H, Hahn YB, Hays DC, Lambers ES, Park YD, Feng T, Childress JR, Pearton SJ, J. Vac. Sci. Technol. A , 17 (4), 2223, 1999
Jung KB, Cho H, Hahn YB, Hays DC, Lambers ES, Park YD, Feng T, Childress JR, Pearton SJ, J. Appl. Phys. , 85 , 4788, 1999
Jung KB, Cho H, Hahn YB, Hays DC, Lambers ES, Park YD, Feng T, Childress JR, Pearton SJ, Appl. Surf. Sci. , 140 , 215, 1999
Liberman MA, Lichtenberg AJ, Principles of Plasma Discharges and Materials Processing, John-Wiley and Sons, N. Y., 1994
Park HJ, Ra HW, Song KS, Hahn YB, Korean J. Chem. Eng. , 21 (6), 1235, 2004
Park JS, Park HJ, Hahn YB, Yi GC, Yoshikawa A, J. Vac. Sci. Technol. B , 21 (2), 800, 2003
Park MH, Hong YK, Gee SH, Erickson DW, Appl. Phys. Lett. , 83 , 329, 2003
Portier X, Petford-Long AK, Appl. Phys. Lett. , 76 , 754, 2000
Ra HW, Park HJ, Kim KJ, Kim WY, Hahn YB, Korean Chem. Eng. Res. , 43 (1), 76, 2005
Ra HW, Hahn YB, Song KS, Park MH, Hong YK, J. Vac. Sci. Technol. A , 22 (6), 2388, 2004
Tsang CH, J. Appl. Phys. , 69 , 5393, 1991
Vartuli CB, Pearton SJ, Lee JW, Mackenzie JD, Abernathy CR, Shul RJ, Constantine C, Barratt C, J. Electrochem. Soc. , 144 (8), 2844, 1997
Vasile MJ, Mogab CJ, J. Vac. Sci. Technol. A , 4 , 1841, 1986
Zheng Y, Zhu JG, J. Appl. Phys. , 81 , 5471, 1997
이전 논문 다음 논문
Result Search