| Issue |
Korean Chemical Engineering Research,
Vol.42, No.4, 447-450, 2004
Vol.42, No.4, 447-450, 2004
플라즈마 화학증착법에 의한 질화탄소규소 박막의 성장과 Si 나노점 형성
Formation of Si Nano Dots and Silicon Carbon Nitride Films by Plasma Enhanced Chemical Vapor Deposition
질화탄소규소(SiCN)박막을 Si(100)기판에 플라즈마 화학증착법을 이용하여 300 ℃에서 증착하였다. EDX, FT-IR, AFM, SEM을 통해 SiCN박막의 조성과 결합구조, 표면 형태에 대해 분석하였다. 이들을 통한 분석으로 SiCN박막이 대표적으로 Si-C, Si-N, C=N결합으로 형성됨을 알 수 있었다. SiCN박막을 600 ℃ 에서 열처리하면 표면에너지 변화로 인해 표면에 Si나노점들이 형성됨을 보였다.
Silicon carbon nitride (SiCN) films were prepared by plasma enhanced chemical vapor deposition on Si(100) substrate at 300 ℃. The compositions, bonding structures, and surface morphology of the SiCN films were investigated by EDX, FT-IR, AFM and SEM. The main bonds in the films were Si-C, Si-N, and C=N. The surface structure of the as-grown SiCN films was changed by a thermal treatment at 600 ℃, resulting in formation of silicon nanodots.
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참고문헌정보(참고문헌, 인용문헌)는 화학공학소재연구정보센터에 의해 제공되고 있습니다.