The etch rates of photoresist (PR) and the etch selectivity of SiO2 to PR in a high density CHF3 plasma were investigated at different ion-incident angles and bias voltages. A Faraday cage was employed for the accurate control of ion-incident angles. The ion energy was controlled by changing bias voltages. The etch rate of SiO2 continuously decreased with ion-incident angles but the etch rate of PR remained constant up to the middle angle region and decreased afterwards. The etch rates of SiO2 normalized to those at 0o incident angle changed with the ion-incident angle following a cosine(θ) curve. On the other hand, the normalized etch rates of the PR changed showing a drastic overcosine shape in the middle angle region. The etch selectivity of SiO2 to PR decreased with an increase in the ion-incident angle because the etch yields of PR were enhanced by physical sputtering in the middle angle region compared to the case of SiO2 etching. The etch selectivity of SiO2 to PR decreased with an increase in the bias voltage at nearly all ion-incident angles.