| Issue |
Korean Journal of Chemical Engineering,
Vol.13, No.3, 328-330, 1996
Vol.13, No.3, 328-330, 1996
REMOVAL OF ORGANIC IMPURITIES FROM THE SILICON SURFACE BY OXYGEN AND UV CLEANING
We have studied the effect of oxygen and water vapor on the removal of organic impurities from the porous silicon surface under UV irradiation. Infrared spectrum observations of the treated surface suggest that decom-position of oxygen to produce ozone, atomic oxygen, and hydroxyl radical is a rate determination step for the overall cleaning process.
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[Cited By]
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