Print: | ISSN 0256-1115 |
Online: | ISSN 1975-7220 |
Korean Journal of Chemical Engineering,
Vol.9, No.4, 194-198, 1992 XPS STUDY ON OXIDE ETCH RESIDUE AND CLEANING
A layer structure, chemical composition and cleaning process of oxide dry etch residue on silicon substrate were studied. It was observed that the structure of the etch residue consisted of CFx-polymer/ SiOyCz. The ratio of y and z in SiOyCz layer is monotonously changing with depth : y/z is maximum at the interface of CFx-polymer and SiOxCz. and minimum at the interface of SiOyCz and silicon substrate. Two step cleaning was proposed : dry and wet cleaning. The most effective process was silicon light etch(CF4/O2 REMOTE PLASMA), followed by NH4OH-H2O2 mixture and HF dip. From X-Ray Photoelectron Spectroscopy(XPS) data, it was found that oxide etch residue was completely removed by dry and wet cleaning.
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