Abstract.Neutrons with an average energy of 9.8±0.8MeV were irradiated onto silicon carbide Schottky diodes. After bombardment at a fluency of 2.75×10^(11) neutron/cm^(2), the Schottky barrier height, ideality factor, and the leakage currents remained unchanged. The electrical properties began to deteriorate after bombardment at a fluency of 5.5×10^(11) neutron/cm^(2). In this study, we demonstrate that SiC SBD is robust under neutron irradiations and is well suited for space operations up to bombardments at a fluency of 2.75×10^(11) neutron/cm^(2).