Issue
Korean Journal of Chemical Engineering,
Vol.22, No.3, 489-493, 2005
Growth and Formation Mechanism of Sea Urchin-Like ZnO Nanostructures on Si
Sea urchin-like nanostructures of ZnO consisting of ZnO nanowires with blunt faceted ends were grown on Si (100) substrates by oxidation of metallic Zn at 600 ℃. ZnO nanowires having a diameter of 30-60 nm and length of 2-4 μm were in similar shape with uniform diameter along its entire length with well faceted blunt ends. X-ray diffraction and transmission electron microscope analysis showed that the as-grown nanostructures were highly crystalline with wurtzite hexagonal structure having lattice constants of a=b=3.25 A and c=5.21 A. Room temperature photoluminescence (PL) measurements showed a weak near band-edge emission at 380 nm, but a strong green emission at 500-530 nm. A model for vapor-solid (VS) growth mechanism of ZnO nanowires was presented, in which nucleation of ZnO is crucial for the growth of the nanostructures.
[References]
  1. Banerjee D, Lao JY, Wang DZ, Huang JY, Ren ZF, Steeves D, Kimball B, Sennett M, Appl. Phys. Lett., 83, 2061, 2003
  2. Banerjee D, Lao JY, Wang DZ, Huang JY, Steeves D, Kimball B, Ren ZF, Nanotechnology, 15, 404, 2004
  3. Gao PX, Ding Y, Wang ZL, Nano Lett., 3, 1315, 2003
  4. Huang MH, Mao S, Feick H, Yan H, Wu Y, Kind H, Weber E, Russo R, Yang P, Science, 292, 1897, 2001
  5. Huang MH, Wu YY, Feick H, Tran N, Weber E, Yang PD, Adv. Mater., 13, 113, 2001
  6. Huang Y, Duan X, Cui Y, Laubon LJ, Kim KH, Lieber CM, Science, 294, 1313, 2001
  7. Kim TY, Lee SH, Mo YH, Nahm KS, Kim JY, Suh EK, Kim M, Korean J. Chem. Eng., 21(3), 733, 2004
  8. Kind H, Yan H, Law M, Messer B, Yang P, Adv. Mater., 14, 158, 2002
  9. Lao LY, Wen JG, Ren ZF, Nano Lett., 2, 1287, 2002
  10. Lee S, Im YH, Hahn YB, Korean J. Chem. Eng., 22(2), 334, 2005
  11. Li Y, Meng GW, Zhang LD, Phillipp F, Appl. Phys. Lett., 76, 2011, 2000
  12. Lyu SC, Zhang Y, Lee CJ, Chem. Mater., 15, 3249, 2003
  13. Park WI, Kim DH, Jung SW, Yi GC, Appl. Phys. Lett., 80, 4232, 2002
  14. Park WI, Yi GC, Kim M, Pennycook SJ, Adv. Mater., 15, 526, 2003
  15. Pan ZW, Dai ZR, Wang ZL, Science, 291(5510), 1947, 2001
  16. Vanheusdan K, Warren WL, Seager CH, Tallent DR, Voigt JA, Gnade BE, J. Appl. Phys., 79, 7983, 1996
  17. Vayssieres L, Adv. Mater., 15, 464, 2003
  18. Wagner RS, Ellis WC, Appl. Phys. Lett., 4, 89, 1964
  19. Wu J, Liu S, Adv. Mater., 14, 526, 2003
  20. Yan H, He R, Pham J, Yang P, Adv. Mater., 15, 402, 2003
  21. Liu B, Zeng HC, J. Am. Chem. Soc., 125(15), 4430, 2003
  22. Yao BD, Chan YF, Wang N, Appl. Phys. Lett., 81, 757, 2001
  23. Xing YJ, Xi ZH, Xue ZQ, Zhang XD, Song JH, Wang RM, Xu J, Song Y, Zhang SL, Yu DP, Appl. Phys. Lett., 83, 1689, 2003