| Issue |
Korean Journal of Chemical Engineering,
Vol.22, No.2, 334-338, 2005
Vol.22, No.2, 334-338, 2005
Two-Step Growth of ZnO Films on Silicon by Atomic Layer Deposition
Two-step growth of ZnO by atomic layer deposition at low temperatures was performed to grow quality ZnO films on silicon substrates: first, the growth of a buffer layer at 130 ℃ and second, the growth of the main layer at 210 ℃. Structural and optical properties of the ZnO films deposited on ZnO-buffer/Si(111) were investigated as a function of buffer layer thickness. The films showed a strong UV emission at 380 nm and a weak green emission at 520-570 nm. The ZnO films deposited on a 327 Å buffer layer showed overall the best surface morphology and structural and optical properties.
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[Cited By]
- Kim SH, Umar A, Hahn YB, Korean Journal of Chemical Engineering, 22(3), 489, 2005
- Umar A, Ra HW, Jeong JP, Suh EK, Hahn YB, Korean Journal of Chemical Engineering, 23(3), 499, 2006
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