Print: | ISSN 0256-1115 |
Online: | ISSN 1975-7220 |
Korean Journal of Chemical Engineering,
Vol.19, No.3, 524-528, 2002 Inductively Coupled Plasma Etching of Pb(ZrxTi1- x)O3 Thin Films in Cl2/C2F6/Ar and HBr/Ar Plasmas
Pb(ZrxTi1- x)O3 thin films were etched in an inductively coupled plasma by using various etch gases such as Cl2/Ar, C2F6/Ar, Cl2/C2F6/Ar and HBr/Ar. The etch rates and etch profiles for each etch gas were investigated. Fast etch rates were obtained in chlorine-containing etch gases (e.g., Cl2/Ar and Cl2/C2F6/Ar), and clean and steep etch profiles were achieved in Cl2/C2F6/Ar or HBr/Ar gases. The gas mixture of Cl2 and C2F6 was proposed to give a fast etch rate and a steep sidewall angle of etched patterns. The optimum gas mixture of Cl2/C2F6/Ar was found by varying the gas ratio of Cl2 to C2F6. On the other hand, HBr/Ar gas as an alternative for etching of the Pb(ZrxTi1-x)O3 films was examined. Cl2/C2F6/Ar and HBr/Ar etch gases were compared with respect to etch rate, etch profile and electrical properties.
Keywords:
Inductively Coupled Plasma; High Density Plasma Etching; Pb(ZrxTi1-x)O3 Thin Film; Cl2/C2F6/Ar; HBr/Ar
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