Korean Journal of Chemical Engineering, Vol.31, No.1, 62-67, 2014
Fabrication and characterization of silicon nanostructures based on metal-assisted chemical etching
We present a facile method to fabricate one-dimensional Si nanostructures based on Ag-induced selective etching of silicon wafers. To obtain evenly distributed Si nanowires (SiNWs), the fabrication parameters have been optimized. As a result, a maximum of average growth rate of 0.15 μm/min could be reached. Then, the fabricated samples were characterized by water contact angle (CA) experiments. As expected, the as-etched silicon samples exhibited a contact angle in the range of 132°-136.5°, whereas a higher contact angle (145°) could be obtained by chemical modification of the SiNWs with octadecyltrichlorosilane (OTS). Additionally, Raman spectra experiments have been carried out on as-prepared nanostructures, showing a typical decreasing from 520.9 cm^(-1) to 512.4 cm^(-1) and an asymmetric broadening, which might be associated with the phonon quantum confinement effect of Si nanostructures.
[References]
Rao CNR, Deepak FL, Gundiah G, Govindraj A, Prog, Solid State Chem. , 31 (1-2), 5, 2003
Xia YN, Yang PD, Sun YG, Wu YY, Mayers B, Gates B, Yin YD, Kim F, Yan YQ, Adv. Mater. , 15 (5), 353, 2003
Goldberger J, Hochbaum AI, Fan R, Yang P, Nano Lett. , 6 (5), 973, 2006
Tian B, Zheng X, Kempa TJ, Fang Y, Yu N, Yu G, Huang J, Lieber CM, Nature. , 449 , 885, 2007
Peng KO, Wang X, Wu XL, Lee ST, Nano Lett. , 9 (11), 3704, 2009
Qu Y, Liao L, Li Y, Zhang H, Huang Y, Duan X, Nano Lett. , 9 (12), 4539, 2009
Sivakov V, Andra G, Gawlik A, Berger A, Plentz J, Falk F, Christiansen SH, Nano Lett. , 9 (4), 1549, 2009
Yao Y, McDowell MT, Ryu I, Wu H, Liu N, Hu L, Nix WD, Cui Y, Nano Lett. , 11 (7), 2949, 2011
Ge M, Rong J, Fang X, Zhou C, Nano Lett. , 12 (5), 2318, 2012
Chen K, Li BR, Chen Y, Nantod. , 6 (2), 131, 2011
Hakim MMA, Lombardini M, Sun K, Giustiniano F, Roach PL, Davies DE, Howarth PH, Planque MRR, Morgan H, Ashburn P, Nano Lett. , 12 (4), 1868, 2012
Ria E, Liu XM, Ross CA, Adeyeye AO, Choi WK, J.Appl. Phys. , 112 (2), 024312, 2012
Bauer J, Fleischer F, Breitenstein O, Schubert L, Werner P, Gsele U, Zacharias M, Appl. Phys. Lett. , 90 , 012105, 2007
Yang YH, Wu SJ, Chin HS, Lin PI, Chen YT, J. Phys. Chem. B , 108 (3), 846, 2004
Lew KK, Redwing JM, J. Cryst. Growth , 254 (1-2), 14, 2003
Pan H, Lim S, Poh C, Sun H, Wu X, Feng Y, Lin J, Nanotechnology. , 16 , 417, 2005
Zhang RQ, Lifshitz Y, Lee ST, Adv. Mater. , 15 (7-8), 635, 2003
Heitsch AT, Fanfair DD, Tuan HY, Korgel BA, J. Am. Chem. Soc. , 130 (16), 5436, 2008
Morton KJ, Nieberg G, Bai SF, Chou SY, Nanotechnology. , 19 , 345301, 2008
Tong HD, Chen S, van der Wiel WG, Carlen ET, van den Berg A, Nano Lett. , 9 (3), 1015, 2009
Connor ST, Tang MX, Cui Y, Appl. Phys. Lett. , 93 (13), 133109, 2008
Peng KQ, Yan YJ, Gao SP, Zhu J, Adv. Mater. , 14 (16), 1164, 2002
Zhang ML, Peng KQ, Fan X, Jie JS, Zhang RQ, Lee ST, Wong NB, J. Phys. Chem. C. , 112 (12), 4444, 2008
Chen H, Wang H, Zhang XH, Lee CS, Lee ST, Nano Lett. , 10 (3), 864, 2010
Nassiopoulou AG, Gianneta V, Katsogridakis C, Nanoscale Res. Lett. , 6 , 597, 2011
Peng KQ, Wu Y, Fang H, Zhong XY, Xu Y, Zhu J, Ind. Eng. Chem. Res. , 44 (18), 2737, 2005
Peng KQ, Hu JJ, Yan YJ, Wu Y, Fang H, Xu Y, Lee ST, Zhu J, Adv. Funct. Mater. , 16 (3), 387, 2006
Huang ZP, Fang H, Zhu J, Adv. Mater. , 19 (5), 744, 2007
Peng KQ, Wang X, Wu XL, Lee ST, Appl. Phys. Lett. , 95 (14), 143119, 2009
Pan CF, Luo ZX, Xu C, Luo J, Liang RR, Zhu G, Wu WZ, Guo WX, Yan XX, Xu J, Wang ZL, Zhu J, ACS Nano. , 5 (8), 6629, 2011
Peng KQ, Yan YJ, Gao SP, Zhu J, Adv. Funct. Mater. , 13 (2), 127, 2003
Peng KQ, Zhu J, J. Electroanal. Chem. , 558 , 35, 2003
Peng KQ, Wu Y, Fang H, Zhong XY, Xu Y, Zhu J, Angew.Chem. , 117 (18), 2797, 2005
Cassie ABD, Baxter S, Trans. Faraday Soc. , 40 , 546, 1944
Huang XJ, Lee JH, Lee JW, Yoon JB, Choi YK, Small. , 4 (2), 211, 2008
Shi F, Song YY, Niu J, Xia XH, Wang ZQ, Zhang X, Chem. Mater. , 18 (5), 1365, 2006
Li BB, Yu DP, Zhang SL, Phys. Rev. B. , 59 (3), 1645, 1999
Li C, Fang G, Sheng S, Chen Z, Wang J, Ma S, Zhao X, Physica E. , 30 (1-2), 169, 2005
Adu KW, Gutierrez HR, Kim UJ, Eklund PC, Phys. Rev.B. , 73 (15), 15533, 2006
Gupta R, Xiong Q, Adu CK, Kim UJ, Eklund PC, Nano Lett. , 3 (5), 627, 2003
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