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Korean Journal of Chemical Engineering, Vol.21, No.6, 1235-1239, 2004
Inductively Coupled Plasma Etching of Ta, Co, Fe, NiFe, NiFeCo, and MnNi with Cl2/Ar Discharges
Dry etching of the magnetic thin films such as Ta, Fe, Co, NiFe, NiFeCo, and MnNi was carried out in inductively coupled plasmas of Cl2/Ar mixture. All the magnetic materials went through a maximum etch rate at 25% Cl2. The effects of the ICP source power and the rf chuck power on the etch rate and the surface roughness were quite dependent of the materials. An ion-enhanced chemical etch mechanism was important for the magnetic films. The surface roughness of the etched samples was relatively constant of the rf chuck power up to 200W, but a rougher surface at a higher rf power was obtained. Post-etch cleaning of the etched samples in de-ionized water reduced the chlorine residues substantially.
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[Cited By]
- Seul SD, Lim JM, Ha SH, Kim YH, Korean Journal of Chemical Engineering, 22(5), 745, 2005
- Ra HW, Song KS, Hahn YB, Korean Journal of Chemical Engineering, 22(5), 793, 2005
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