| Issue |
| Total 6 articles [ 키워드: PECVD ] |
| No. | Article |
| 1 |
Korean Journal of Chemical Engineering, 35 (1), pp.246-250 (2018) Effects of growth temperature on titanium carbide (TiC) film formation using low-frequency (60 Hz) plasma-enhanced chemical vapor deposition Kim HT, Lee SY, Lee HR, et al. |
| 2 |
Korean Journal of Chemical Engineering, 31 (1), pp.162-165 (2014) Effect of plasma power on degradation of chitosan Lee KR, Song KH |
| 3 |
Korean Journal of Chemical Engineering, 25 (6), pp.1539-1545 (2008) Effects of silyl concentration, hydrogen concentration, ion flux, and silyl surface diffusion length on microcrystalline silicon film growth Wen S, Zhang L, Lu J, et al. |
| 4 |
Korean Journal of Chemical Engineering, 23 (2), pp.325-328 (2006) Formation of nanodots and nanostripes of carbon nitride on silicon by plasmaand thermal treatments Kim SH, Hong JH, Hahn YB |
| 5 |
Korean Journal of Chemical Engineering, 22 (4), pp.639-642 (2005) Structural Properties of Amorphous Carbon Thin Films Deposited by LF (100 kHz), RF (13.56MHz), and Pulsed RF (13.56MHz) Plasma CVD Kim DS |
| 6 |
Korean Journal of Chemical Engineering, 13 (5), pp.473-477 (1996) PREPARATION AND CHARACTERIZATION OF TiO2 THIN FILMS BY PECVD ON Si SUBSTRATE Lee IS, Kim JW, Youn CJ, et al. |
