| Issue |
| Total 5 articles [ 저자: Ansari SG ] |
| No. | Article |
| 1 |
Korean Journal of Chemical Engineering, 25 (3), pp.593-598 (2008) Influence of the silicon surface treatment by plasma etching and scratching on the nucleation of diamond grown in HFCVD - a comparative study Ansari SG, Dar MA, Kim YS, et al. |
| 2 |
Korean Journal of Chemical Engineering, 22 (5), pp.770-773 (2005) Comparative Study of Diamond Films Grown on Silicon Substrate Using Microwave Plasma Chemical Vapor Deposition and Hot-Filament Chemical Vapor Deposition Technique Dar MA, Kim YS, Ansari SG, et al. |
| 3 |
Korean Journal of Chemical Engineering, 21 (1), pp.262-266 (2004) Nucleation of Diamond over Nanotube Coated Si Substrate Using Hot Filament Chemical Vapor Deposition (CVD) System Ansari SG, Seo HK, Kim GS, et al. |
| 4 |
Korean Journal of Chemical Engineering, 20 (6), pp.1154-1157 (2003) Lonsdaleite Diamond Growth on Reconstructed Si (100) by Hot-Filament Chemical Vapor Deposition (HFCVD) Chiem CV, Seo HK, Ansari SG, et al. |
| 5 |
Korean Journal of Chemical Engineering, 20 (4), pp.772-775 (2003) Effect of Deposition Temperature on the Growth of Y1Ba2Cu3O7-x Thin Film by Aerosol Assisted Chemical Vapor Deposition Using Liquid Solution Sources Kim BR, Ansari SG, Kim YS, et al. |
