| Issue |
HWAHAK KONGHAK,
Vol.38, No.5, 676-682, 2000
Vol.38, No.5, 676-682, 2000
Si(100) 기판 위에 성장된 3C-SiC(100)의 특성 연구
Characterization of 3C-SiC(100) Grown on Si(100) Substrate
고주파 유도 화학 증착(rf-inductive chemical vapor deposition) 장치를 이용하여 여러 가지 성장 변수(성장 온도, 성장 압력, 반응기체유량, Si/C 조성비 등)에서 Si(100) 기판 위에 입방정계 SiC(3C-SiC) 박막을 성장하였다. 1,170-1,300 ℃의 온도에서 SiC 박막은 Si(100) 기판 방향을 따라 단결정(single crystalline)으로 성장되었다. 또한 3.4-400 torr의 감압에서 성장한 SiC 박막은 성장 압력이 증가함에 따라 성장박막의 두께가 증가하였으며 계면에서 형성되는 보이드(void)의 크기와 밀도가 감소하였다. Si/C의 비를 변화(0.25-0.5)시키면서 Si 기판 위에 SiC 박막을 성장시킨 실험결과로부터, SiC/Si 계면에 생성되는 보이드는 Si 기판으로부터 Si 원자들이 외부로 확산되어 나와 형성됨을 알 수 있었다. 성장 중 박막 내에 생성되는 응력(stress)과 변형(strain)을 적외선 분광법(FT-IR)으로 분석하였으며, SiC/Si 계면에 생성되는 보이드는 Si/C의 비를 변화시킴으로써 제어될 수 있음을 보였다.
Single crystal cubic SiC(100) thin films were grown on Si(100) at various growth conditions in a home made RF-inductive chemical vapor deposition system. The orientation of SiC films grown at the temperature range of 1170-1300 ℃ followed that of Si substrate used in the growth. The increase of the growth pressure (3.4-400 torr) increased the thickness of SiC films, whereas decreased the size and density of voids formed at SiC/Si interface during the growth. From the experiments in the growth of SiC film on Si substrate as a function of Si/C atomic ratio (0.25-0.5), it was found that the out-diffusion of Si atom from Si substrate caused the formation of voids at SiC/Si interface. The stress and strain generated in the grown film were analyzed using a fourier transformation infrared spectroscopy. The formation of voids was suppressed by adjusting Si/C atomic ratios during the growth.
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