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- Language
- English
- Conflict of Interest
- In relation to this article, we declare that there is no conflict of interest.
- Publication history
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Received August 27, 2025
Revised December 3, 2025
Accepted December 23, 2025
Available online April 5, 2026
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This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits
unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Most Cited
Anisotropic Etching of Cobalt Thin Films Using High Density Plasma of Ethylenediamine/Ar Gas Mixture
https://doi.org/10.1007/s11814-025-00634-7
Abstract
Dry etching of Co thin fi lms patterned with TiN hard marks was conducted using a high-density plasma of ethylenediamine/Ar
gas mixture. The eff ects of ethylenediamine concentration on the etch characteristics of the Co thin fi lms were
examined. In addition, the main etch parameters were investigated in terms of the etch rate, etch selectivity, and the etch
profi le. Scanning probe microscopy, optical emission spectroscopy, and X-ray photoelectron spectroscopy (XPS) were
utilized to elucidate the etch mechanism in ethylenediamine/Ar gas chemistry. XPS analysis confi rmed the formation of
Co(CN) 2 during the etching. Finally, the redeposition-free anisotropic etching of Co thin fi lms patterned with 150 nm lines
were achieved using an ethylenediamine/Ar gas mixture.
