Overall
- Language
- English
- Conflict of Interest
- In relation to this article, we declare that there is no conflict of interest.
- Publication history
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Received September 15, 2025
Revised September 15, 2025
Accepted September 23, 2025
Available online December 25, 2025
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This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits
unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Most Cited
Ballistic Transport in Plasma Oxide Etching: A Realistic Universal Surface Reaction Model
https://doi.org/10.1007/s11814-025-00571-5
Abstract
We propose a universal surface reaction model that incorporates neutral and ion transport mechanisms through a steadystate
passivation layer in high-aspect-ratio plasma oxide etching. This two-layer model effectively captures the concurrent
deposition and etching characteristics by explicitly accounting for neutral diffusion and ion scattering transport processes.
Detailed kinetic models for deposition and etching are developed to closely reflect the transport mechanisms in a steady-state
passivation layer (SSPL), and their validity is supported by sensitivity analyses of key parameters against experimental data.
Consequently, the proposed model provides a realistic description of plasma oxide etching behavior. Furthermore, by integrating
this model with a well-established three-dimensional ballistic transport model in high-aspect-ratio (HAR) structures,
we offer valuable insights into previously unexplored aspects of the HAR etching process.
