Articles & Issues
- Language
- English
- Conflict of Interest
- In relation to this article, we declare that there is no conflict of interest.
- Publication history
-
Received July 20, 2024
Accepted October 4, 2024
Available online February 25, 2025
-
This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits
unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
All issues
Design of Homojunction Perovskite Solar-Cell Devices Without Hole-Transport Layer
https://doi.org/10.1007/s11814-024-00304-0
Abstract
Perovskite solar cells (PSCs) that lack a hole transport layer (HTL) attract considerable interest because of their straightforward
design. This study utilizes the inherent self-doping properties of perovskite to propose a novel homojunction design
combining n-FASnI 3 and p-FASnI 3 for effi cient HTL-free PSCs. The internal factors aff ecting the device, such as defect
density, electron affi nity, bandgap, and doping concentration, are investigated using the solar-cell capacitance simulator
(SCAPS-1D). An interfacial defect layer (IDL) is introduced between n-FASnI 3 and TiO 2 to mitigate recombination at interfaces,
with related parameters also optimized. Furthermore, the infl uence of various metal electrodes on PSC performance
is examined. Ultimately, the cell achieves an optimized power-conversion effi ciency of 30.52%. These fi ndings highlight
the bright prospects of homojunction-based HTL-free PSCs. They simplify device structure and production processes while
preserving high effi ciency. This research lays the groundwork for future industrial applications of HTL-free PSCs in the
fi eld of photovoltaics.
