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Received August 4, 2011
Accepted December 21, 2011
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This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits
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Electroless deposition of NiMoP films using alkali-free chemicals for capping layers of copper interconnections
Department of Chemical Engineering and Division of Energy Systems Research, Ajou University, Suwon 443-749, Korea 1Department of Chemical Engineering, SungKyunKwan University, Suwon 440-746, Korea
changkoo@ajou.ac.kr
Korean Journal of Chemical Engineering, September 2012, 29(9), 1259-1265(7)
https://doi.org/10.1007/s11814-011-0301-4
https://doi.org/10.1007/s11814-011-0301-4
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Abstract
NiMoP films were electrolessly deposited on copper substrates in a bath containing alkali-free chemicals. The film characteristics such as composition, thickness (or deposition rate), and microstructure were investigated by varying the concentration of the electrolyte. The film thickness increased with nickel ion concentration and decreased with increasing concentrations of either molybdate or hypophosphite ions. The nickel, molybdenum, and phosphorous content of the film increased as the concentrations of their corresponding precursors increased in the bath._x000D_
Microstructural analysis showed that amorphous films formed when the combined content of molybdenum and phosphorous in the film was sufficiently high. Higher combined contents of molybdenum and phosphorous also improved the corrosion resistance of the film.
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Chou YH, Sung Y, Bai CY, Ger MD, J. Electrochem. Soc., 155(9), D551 (2008)
Gomez E, Pellicer E, Valles E, J. Electroanal. Chem., 580(2), 222 (2005)
WertheimGK, Wernick JH, Crecelius G, Phys. Rev. B., 18, 875 (1978)
Klein JC, Hercules DM, J. Catal., 82, 424 (1983)
Brox B, Olefjord I, Surf. Interface Anal., 13, 3 (1988)
Anwar M, Hogarth CA, Bulpett R, J. Mater. Sci., 24, 3087 (1989)
Okamoto Y, Imanaka T, Teranishi S, J. Catal., 65, 448 (1980)
Taniguchi M, Suga S, Seki M, Sakamoto H, Kanzaki H, Akahama Y, Terada S, Endo S, Narita S, Solid State Commu., 45, 59 (1983)
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