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Received May 7, 2011
Accepted August 9, 2011
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Low-temperature growth of highly conductive and transparent aluminum-doped ZnO film by ultrasonic-mist deposition
1School of Chemical Engineering, Sungkyunkwan University, Suwon 440-746, Korea 2Department of Biochemical Engineering, Dongyang Mirae University, Seoul 152-714, Korea 3Advanced Materials and Process Research Center for IT, Sungkyunkwan University, Suwon 440-746, Korea
sungmcho@skku.edu
Korean Journal of Chemical Engineering, April 2012, 29(4), 525-528(4), 10.1007/s11814-011-0207-1
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Abstract
Aluminum-doped ZnO (AZO) thin films are grown by ultrasonic-mist deposition method for the transparent conducting oxides (TCO) applications at low temperatures. The AZO films can be grown at a temperature as low as 200 ℃ with zinc acetylacetonate and aluminum acetylacetonate sources. The lowest resistivity of grown AZO films is 1.0×10^(-3) Ω·cm and the lowest sheet resistance of 1 μm thick films is 10 Ω/□, which is close to that of commercial indium tin oxide (ITO) or Asahi U-type SnO2 : F glass. The highest carrier concentration and mobility are 5.6×1020cm^(-3) and 15 cm2/V·sec, respectively. Optical transmittance of the AZO films is found over 75% for all growth conditions. We believe that the properties of grown AZO films in this study are the best among all reported previously elsewhere by solution processes.
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References
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Sato K, Gotoh Y, Wakayama Y, Hayashi Y, Adachi K, Nishimura H, Reports of the Research Labs ; Asahi Glass Co. Ltd., 42, 129 (1992)
