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Received September 22, 2008
Accepted October 28, 2008
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Electrical characterizations of Neutron-irradiated SiC Schottky diodes
Department of Chemical and Biological Engineering, Korea University, Seoul 136-713, Korea
Korean Journal of Chemical Engineering, January 2009, 26(1), 285-287(3), 10.1007/s11814-009-0049-2
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Abstract
Abstract.Neutrons with an average energy of 9.8±0.8MeV were irradiated onto silicon carbide Schottky diodes. After bombardment at a fluency of 2.75×10^(11) neutron/cm^(2), the Schottky barrier height, ideality factor, and the leakage currents remained unchanged. The electrical properties began to deteriorate after bombardment at a fluency of 5.5×10^(11) neutron/cm^(2). In this study, we demonstrate that SiC SBD is robust under neutron irradiations and is well suited_x000D_
for space operations up to bombardments at a fluency of 2.75×10^(11) neutron/cm^(2).
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References
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Bhatnagar M, McLarty PK, Member IEEE, Baliga BJ, IEEE ELECTRON DEVICE LETTERS, 13, 501 (1992)
Kim HY, Kim J, Yun SP, Kim KR, Anderson TJ, Ren F, Pearton SJ, J. of the Electrochemical Society, 155, H513 (2008)
Kim J, Nigam S, Ren F, Schoenfeld D, Chung GY, Pearton SJ, Electrochem. Solid State Lett., 6(8), G105 (2003)
Sze SM, Physics of semiconductor devices, 2nd, John Wiley & Sons (1981)
