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Conflict of Interest: In relation to this article, we declare that there is no conflict of interest.

Publication history: Received August 25, 2003
Accepted September 24, 2003

This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Structural and Optical Properties of InGaN/GaN Triangular-shape Quantum Wells with Different Threading Dislocation Densities

Rak Jun Choi Hyung Jae Lee Yoon-Bong Hahn^† Hyung Koun Cho¹

School of Chemical Engineering and Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea ¹Department of Metallurgical Engineering, Dong-A University, Busan 604-714, Korea

Korean Journal of Chemical Engineering, January 2004, 21(1), 292-295(4), 10.1007/BF02705411

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Abstract

Structural and optical properties of InGaN/GaN multiple triangular quantum well (QW) structures with different threading dislocation (TD) densities of 1.5 × 10⁸ (sample A) and 4.5 × 108 cm^-2 (sample B) have been studied. High resolution transmission electron microscopy and x-ray diffraction analysis showed more fluctuation of local In composition in the sample B, which was attributed to the stress field created by the dislocations as it provides a driving force for the migration of In atoms towards dislocations. Severe degradation of photoluminescence intensity of the sample B was also observed at >50 K. The optical and structural properties of the InGaN/GaN triangular QW structures are overall substantially affected by the TD density.

Keywords

InGaN/GaN Multiple Quantum Wells Light-emitting Diodes Threading Dislocation

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