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Issue
Korean Journal of Chemical Engineering,
Vol.29, No.4, 525-528, 2012
Low-temperature growth of highly conductive and transparent aluminum-doped ZnO film by ultrasonic-mist deposition
Seo SW, Won SH, Chae H, Cho SM
Aluminum-doped ZnO (AZO) thin films are grown by ultrasonic-mist deposition method for the transparent conducting oxides (TCO) applications at low temperatures. The AZO films can be grown at a temperature as low as 200 ℃ with zinc acetylacetonate and aluminum acetylacetonate sources. The lowest resistivity of grown AZO films is 1.0×10^(-3) Ω·cm and the lowest sheet resistance of 1 μm thick films is 10 Ω/□, which is close to that of commercial indium tin oxide (ITO) or Asahi U-type SnO2 : F glass. The highest carrier concentration and mobility are 5.6×1020cm^(-3) and 15 cm2/V·sec, respectively. Optical transmittance of the AZO films is found over 75% for all growth conditions. We believe that the properties of grown AZO films in this study are the best among all reported previously elsewhere by solution processes.
Keywords: Zinc Oxide; Aluminum-doped Zinc Oxide (AZO); Transparent Conducting Oxides; Ultrasonic-mist Deposition
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[Cited By]
  1. Yim EC, Kim SJ, Kee CD, Korean Chemical Engineering Research, 51(6), 766, 2013
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