|
Korean Journal of Chemical Engineering, Vol.23, No.5, 860-865, 2006
Synthesis of ZnO nanowires on steel alloy substrate by thermal evaporation: Growth mechanism and structural and optical properties
ZnO nanowires having a diameter in the range of 15-40 nm and several tens of micrometers in length were grown on steel alloy substrates by the thermal evaporation technique without the use of any catalyst or additives. A detailed structural analysis revealed that the as-grown ZnO nanowires are single crystalline with wurtzite hexagonal structures and preferentially oriented in the c-axis direction. Origination of a strong and sharp Raman-active E2 mode at 436.6 cm.1 indicated that the grown ZnO nanowires have good crystal quality with the hexagonal wurtzite phase. Photoluminescence spectra also exhibited a sharp and strong peak in UV and a suppressed and weak band in the visible region, confirming the good optical properties and less structural defects for the deposited products. Additionally, a systematic growth mechanism is also proposed in detail to acquire a better understanding for the growth of nanowires on steel alloy substrate.
[References]
- Bagnall DM, Chen YF, Zhu Z, Yao T, Shen MY, Goto T, Appl. Phys. Lett., 73, 1038, 1998
- Calleja JM, Cardona M, Phys. Rev. B, 16, 3753, 1977
- Chiou W, Wu W, Ting J, Diam. Relat. Mat., 12, 1841, 2003
- Egehaaf HJ, Oelkrug D, J. Cryst. Growth, 161, 190, 1996
- Fang Z, Wang Y, Peng X, Liu X, Zhen C, Mater. Lett., 57, 4187, 2003
- Haga K, Katahira F, Watanabe H, Thin Solid Films, 343-344, 145, 1999
- Huang M, Mao S, Feick H, Yan H, Wu Y, Kind H, Weber E, Russo R, Yang P, Science, 292, 1897, 2001
- Kang HS, Kang JS, Kim JW, Lee SY, J. Appl. Phys., 95, 1246, 2004
- Kim SH, Umar A, Hahn YB, Korean J. Chem. Eng., 22(3), 489, 2005
- Kim TY, Lee SH, Mo YH, Nahm KS, Kim JY, Suh EK, Kim M, Korean J. Chem. Eng., 21(3), 733, 2004
- Kind H, Yan H, Messer B, Law M, Yang P, Adv. Mater., 14, 158, 2002
- Lee S, Im YH, Hahn YB, Korean J. Chem. Eng., 22(2), 334, 2005
- Li SY, Lee CY, Tseng TY, J. Cryst. Growth, 247, 357, 2003
- Li W, Mao DS, Zheng ZH, Wang X, Liu XH, Zou SC, Zhu YK, Li Q, Xu JF, Surf. Coat. Technol., 128/129, 346, 2000
- Li Y, Meng GW, Zhang LD, Appl. Phys. Lett., 76, 2011, 2000
- Lim J, Shin K, Kim HW, Lee C, Mater. Sci. Eng. B-Solid State Mater. Adv. Technol., 107, 301, 2004
- Liu YC, Xu XY, Mu R, Henderson DO, Lu YM, Zhang JY, Shen DZ, Fan XW, White CW, Appl. Phys. Lett., 83, 1210, 2003
- Meng XQ, Shen DZ, Zhang JY, Zhao DX, Lu YM, Dong L, Zhang ZZ, Liu YC, Fan XW, Solid State Commun., 135, 179, 2005
- Ogata K, Kawanishi T, Maejima K, Sakurai K, Fujita S, Fujita S, Jpn. J. Appl. Phys., 40, L657, 2001
- Rajalakshmi M, Arora AK, Bendre BS, Mahamuni S, J. Appl. Phys., 87, 2445, 2000
- Sekar A, Kim SH, Umar A, Hahn YB, J. Cryst. Growth, 277, 471, 2005
- Studenikin SA, Golego N, Cocivera M, J. Appl. Phys., 84, 2287, 1998
- Sun Y, Fuge GM, Ashfold MNR, Chem. Phys. Lett., 396, 21, 2004
- Umar A, Kim SH, Lee YS, Nahm KS, Hahn YB, J. Cryst. Growth, 282, 131, 2005
- Umar A, Lee S, Im YH, Hahn YB, Nanotechnology, 16, 2462, 2005
- Umar A, Lee S, Lee YS, Nahm KS, Hahn YB, J. Cryst. Growth, 277, 479, 2005
- Vanheusdan K, Seager CH, Warren WL, Tallent DR, Voigt JA, Appl. Phys. Lett., 68, 403, 1995
- Vanheusdan K, Warren WL, Seager CH, Tallent DR, Voigt JA, Gnade BE, J. Appl. Phys., 79, 7983, 1996
- Verghese PM, Clarke DR, J. Appl. Phys., 87, 4430, 2000
- Wang FZ, Ye ZZ, Ma DW, Zhu LP, Zhuge F, Mater. Lett., 59, 560, 2005
- Wang ZL, Materials Today, 7(6), 26, 2004
- Wang ZL, “Nanowires and Nanobelts - Materials, Properties and Devices, Metal and Semiconductor Nanowires,” vol. I and vol. II Kluwer Academic Publisher, Dordrecht, 2003
- Wang ZL, Kong XY, Zuo JM, Phys. Rev. Lett., 91, 185502, 2003
- Xu XY, Zhang HZ, Zhao Q, Chen YF, Xu J, Yu DP, J. Phys. Chem. B, 109(5), 1699, 2005
- Yao BD, Chan YF, Wang N, Appl. Phys. Lett., 81, 757, 2002
- Ye JD, Gu SL, Zhu SM, Qin F, Liu SM, Liu W, Zhou X, Hu LQ, Zhang R, Shi Y, Zheng YD, J. Appl. Phys., 96, 5308, 2004
|