The effects of thermal cycling on residual stresses in both inorganic passivation/insulating layer that is deposited by plasma enhanced chemical vapor deposition (PECVD) and organic thin film that is used as a bonding adhesive are evaluated by 4 point bending method and wafer curvature method. SiO2/SiNx and BCB (Benzocyclobutene) are used as inorganic and organic layers, respectively. A model about the effect of thermal cycling on residual stress and bond strength (Strain energy release rate), Gc, at the interface between inorganic thin film and organic adhesive is developed. In thermal cycling experiments conducted between 25℃ and either 350℃ or 400℃, Gc at the interface between BCB and PECVD SiNx decreases after the first cycle. This trend in Gc agreed well with the prediction based on our model that the increase in residual tensile stress within the SiNx layer after thermal cycling leads to the decrease in Gc. This result is compared with that obtained for the interface between BCB and PECVD SiO2, where the relaxation in residual compressive stress within the SiO2 induces an increase in Gc. These opposite trends in Gcs of the structures including either PECVD SiNx or PECVD SiO2 are caused by reactions in the hydrogen-bonded chemical structure of the PECVD layers, followed by desorption of water.