Parylene-N(PA-N) films for use as interlayer dielectrics in ULSI were deposited from [2.2]paracyclophane at low temperatures below 20℃. The film thickness was measured using AFM and α-step profilometry and the film properties were evaluated using FTIR, DSC, TGA, SEM, and C-V techniques. The film thickness measured was 5,000-12,000Å and the growth rate was 30-70 Å/min. The dielectric constant of the deposited PA-N films was found to be 2.7± 0.05. The deposition rate decreased with increasing carrier gas flow rate, precursor decomposition temperature or wafer temperature, but it increased with increasing pressure. At a precursor decomposition temperature of 750℃ or at a deposition pressure above 1 tour the film surface became rough due to particle formation in the gas phase. It was shown that the condensation of a pxylylene monomer was a rate-limiting step in the growth of the PA-N films.