전자 소자의 구리 금속 배선은 전해 도금을 포함한 다마신 공정을 통해 형성한다. 본 총설에서는 배선 형성을 위한 구리 전해 도금 및 수퍼필링 메카니즘에 대해 다루고자 한다. 수퍼필링 기술은 전해 도금의 전해질에 포함된 유기 첨가제의 영향에 의한 결과이며, 이는 유기 첨가제의 표면 덮임율을 조절하여 웨이퍼 위에 형성된 패턴의 바닥 면에서의 전해 도금 속도를 선택적으로 높임으로써 가능하다. 소자의 집적도를 높이기 위해 금속 배선의 크기는 계속적으로 감소하여 현재 그 폭이 수십 nm 수준으로 줄어들었다. 이러한 배선 폭의 감소는 구리 배선의 전기적 특성 감소, 신뢰성의 저하, 그리고 수퍼필링의 어려움 등 여러 가지 문제를 야기하고 있다. 본 총설에서는 상기 기술한 문제점을 해결하기 위해 구리의 미세 구조 개선을 위한 첨가제의 개발, 펄스 및 펄스-리벌스 전해 도금의 적용, 고 신뢰성 배선 형성을 위한 구리 기반 합금의 수퍼필링, 그리고 수퍼필링 특성 향상에 관한 다양한 연구를 소개한다.
Cu interconnection in electronic devices is fabricated via damascene process including Cu electrodeposition. In this review, Cu electrodeposition and superfilling for fabricating Cu interconnection are introduced. Superfilling results from the influences of organic additives in the electrolyte for Cu electrodeposition, and this is enabled by the local enhancement of Cu electrodeposition at the bottom of filling feature formed on the wafer through manipulating the
surface coverage of organic additives. The dimension of metal interconnection has been constantly reduced to increase the integrity of electronic devices, and the width of interconnection reaches the range of few tens of nanometer. This size reduction raises the issues, which are the deterioration of electrical property and the reliability of Cu interconnection, and the difficulty of Cu superfilling. The various researches on the development of organic additives for the modification
of Cu microstructure, the application of pulse and pulse-reverse electrodeposition, Cu-based alloy superfilling for improvement of reliability, and the enhancement of superfilling phenomenon to overcome the current problems are addressed in this review.
Interconnect, ITRS (International Technology Roadmap for Semiconductors,
on-line document), 2011 edition, International Technology
for Semiconductors, 2011
Andricacos PC, Uzoh C, Dukovic JO, Horkans J,
Deligianni H, IBM J. Res. Dev., 42, 567, 1998
Vereecken PM, Binstead RA, Deligianni H, Andricacos
PC, IBM J. Res. Dev., 49, 3, 2005
Kwon OJ, Cho SK, Kim JJ, Korean Chem. Eng. Res., 47, 141, 2009
Kim MJ, “The Influences of Pulse and Pulse-reverse Electrodeposition
on the Properties of Cu Thin Films and Superfilling
for the Fabrication of Cu Interconnection,” Ph.D. Dissertation,
Seoul National University, Seoul, 2013
West AC, Mayer S, Reid J, Electrochem. Solid State Lett, 4, 50, 2001
Kim SK, Kim JJ, Electrochem. Solid State Lett, 7, 98, 2004
Kim SK. Cho SK, Kim JJ, Lee YS, Electrochem. Solid State Lett., 8, 19, 2005
Lu J, Dreisinger DB, Cooper WC, Hydrometallurgy, 66, 23, 2002
Healy JP, Pletcher D, Goodenough M, J. Electronal. Chem., 338, 167, 1992
Kang M, Gewirth AA, J. Electrochem. Soc., 150, 426, 2003
Frank A, Bard AJ, J. Electrochem. Soc., 150, 244, 2003
Huynh TMT, Hai NTM, Broekmann P, J. Electrochem. Soc., 160, 3063, 2013
Jin Y, Sui Y, Wen L, Ye F, Sun M, Wang Q, J. Electrochem. Soc., 160, 20, 2013
Bozzini B, D’Urzo L, Romanello V, Mele C, J. Electrochem. Soc., 153, 254, 2006
Tan M, Guymon C, Wheeler DR, Harb JN, J. Electrochem. Soc., 154, 78, 2007
Taubert CE, Kolb DM, Memmert U, Meyer H, J. Electrochem. Soc., 154, 293, 2007
Liske R, Wehner S, Preusse A, Kuecher P, Bartha JW, J. Electrochem. Soc., 156, 955, 2009
Cho SK, Kim MJ, Koo HC, Kim SK, Kim JJ, Bull. Korean Chem. Soc., 33, 1603, 2012
Wang W, Li YB, J. Electrochem. Soc., 155, 263, 2008
Garrido MEH, Pritzker MD, J. Electrochem. Soc., 156, 175, 2009
Dow WP, Yen MY, Lin WB, Ho SW, J. Electrochem. Soc., 152, 769, 2005
Cho SK, “Superfilling and Leveling in Damascene Cu Electrodeposition
for High Performance Semiconductor Devices,”
Ph.D. Dissertation, Seoul National University, Seoul, 2013
Josell D, Wheeler D, Huber WH, Bonevich JE, Moffat
TP, J. Electrochem. Soc., 148, 767, 2001
Willey MJ, West AC, J. Electrochem. Soc., 154, 156, 2007
Baker BC, Freeman M, Melnick B, Wheeler D, Josell D, Moffat TP, J. Electrochem. Soc., 150, 61, 2003
Ahn EJ, Kim JJ, Electrochem. Solid State Lett., 7, 118, 2004
Josell D, Burkhard C, Li Y, Cheng YW, Keller RR, Witt C
A, Kelley DR, Bonevich JE, Baker BC, Moffat TP, J. Appl. Phys., 96, 759, 2004
Josell D, Beauchamp CR, Kelley DR, Witt CA, Moffat
TP, Electrochem.Solid State Lett., 8, 54, 2005
Hu Z, Ritzdorf T, J. Electrochem.Soc., 153, 467, 2006
Josell D, Moffat TP, J. Electrochem. Soc., 160, 3009, 2013
Kim SK, Bonevich JE, Josell D, Moffat TP, J. Electrochem. Soc., 154, 443, 2007
Lee CH, Bonevich JE, Bertocci U, Steffens KL, Moffat TP, J. Electrochem. Soc., 158, 366, 2011
Interconnect, ITRS (International Technology Roadmap for Semiconductors,
on-line document), 2007 edition, International Technology
for Semiconductors, 2007
Ohring M, The Materials Science of Thin Films, 1st ed., Academic
Press, Inc., San Diego, 1992
Plombon JJ, Andideh E, Dubin VM, Maiz J, “Influence
of Phonon, Geometry, Impurity, and Grain Size on Copper Line
Resistivity,” Appl. Phys. Lett., 89, 113124-1-113124-3, 2006
Henriquez R, Cancino S, Espinosa A, Flores M, Hoffmann T,
Kremer G, Lisoni JG, Moraga L, Morales R, Oyarzun S,
Suarez MA, Zuniga A, Munoz RC, “Electron Grain
Boundary Scattering and the Resistivity of Nanometric Metallic
Structures,” Phys. Rev. B, 82, 113409-1-113409-4, 2010
Josell D, Bonevich JE, Moffat TP, Aaltonen T, Ritala M,
Leskela M, Electrochem. Solid State Lett., 9, 48, 2006
Cheon T, Choi SH, Kim SH, Kang DH, Electrochem. Solid State Lett., 14, 57, 2011
Hong TE, Cheon T, Kim SH, Kim JK, Park YB, Kwon
OJ, Kim MJ, Kim JJ, J. Alloy. Compd., 580, 72, 2013
Kim MJ, Kim HC, Kim SH, Yeo S, Kwon OJ,
Kim JJ, J. Electrochem. Soc., 160, 3057, 2013
Xu WZ, Xu JB, Lu HS, Wang JX, Hu ZJ, Qu
XP, J. Electrochem. Soc., 160, 3075, 2013
Arunagiri TN, Zhang Y, Chyan O, El-Bouanani M, Kim MJ, Chen KH, Wu CT, Chen LC, “5 nm Ruthenium Thin Film as a Directly Plateable Copper Diffusion Barrier,” Appl. Phys. Lett., 86, 083104-1-083104-3, 2005