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Received November 1, 2009
Accepted January 12, 2010
Available online May 3, 2010
articles This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/bync/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
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Fe(ClO4)3 첨가제의 주입에 의한 염화제이철 수용액의 Shadow Mask 에칭속도 향상 효과

Effect of Fe(ClO4)3 Addition in the Aqueous Ferric Chloride Etchant on the Increase of Shadow Mask Etch Rate

영남대학교 공과대학 디스플레이화학공학부, 712-749 경북 경산시 대동 214-1 1(주) LG이노텍 생산기술팀, 730-713 경북 구미시 구포동 624
School of Display and Chemical Engineering, Yeungnam University, 214-1 Dae-dong, Gyeongsan-si, Gyeongbuk 712-749, Korea 1LG Innotek, Co., Ltd., 624 Gupo-dong, Gumi-si, Gyeongbuk 730-713, Korea
Korean Chemical Engineering Research, April 2010, 48(2), 157-163(7)
https://doi.org/NONE
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Abstract

CRT 용 shadow mask의 생산속도 향상을 위해 첨가제를 투입한 염화제이철 수용액을 개발하였고 이를 shadow mask의 식각속도 향상에 적용하였다. Fe(ClO4)3 첨가제를 종래의 식각용액인 염화제이철 수용액에 투입한 결과, shadow mask의 식각속도가 크게 향상되었으며, 이때 첨가제의 농도가 증가할수록 식각속도가 증가함을 알 수 있었다. 또한 첨가제가 투입된 식각용액으로 순수 니켈과 철-니켈 합금(Invar 강)의 식각속도를 비교한 결과, 대부분의 공정조건에서 둘 사이의 식각속도 차이가 작음을 알 수 있었고, 이는 첨가제의 투입에 따라 니켈과 철의 식각속도가 모두 향상된 결과로 해석되었다. 첨가제의 주입에 따라 식각속도가 증가하는 이유는, 첨가제 내의 음이온인 ClO^(4-)가 염화제이철 수용액 내의 Cl.에 비해 전자를 이동하는 가교로서의 역할이 우수하여 전자를 더 빠르게 이동시킬 수 있기 때문인 것으로 추정된다.
A new etchant formulation was developed in this study to increase the shadow mask production rate, utilizing the Fe(ClO4)3 as an additive in the aqueous FeCl3 solution. The shadow mask etch rate increased substantially with the increase of Fe(ClO4)3 concentration in the etchant. The etch rate difference between Ni and Invar steel was also reduced with the addition of Fe(ClO4)3 for most of the operating conditions, which was caused by the enhanced etch rate of both Ni and Fe by the new etchant. The increase in etch rate with the addition of Fe(ClO4)3 to aqueous ferric chloride solution was attributed to the superior electron transfer capability of ClO^(4-) ion to that of Cl. ion.

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