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Issue
Korean Journal of Chemical Engineering,
Vol.13, No.2, 105-114, 1996
DEPOSITION UNIFORMITIES ON A WAFER AND IN A TRENCH FOR TUNGSTEN SILICIDE LPCVD IN A SINGLE-WAFER REACTOR
Park JH
A transient model of a single-wafer reactor in axisymmetric, stagnation point flow is used to study the effects of operating conditions on film thickness uniformity and composition uniformity across the wafer during low pressure chemical vapor deposition of tungsten silicide. Orthogonal collocation on finite elements is used to solve the transient model equations; continuity, momentum, energy and chemical species balances. A feature scale model for simultaneous Knudsen transport and heterogeneous reactions is used to predict film thickness in infinite trenches. Boundary conditions for the feature scale model are established using the reactor scale model. The use of a combined reactor scale and feature scale model is demonstrated to select deposition conditions which provide both good interwa-fer uniformity and good intrafeature uniformity. Film thickness and composition uniformity on a wafer are predicted using a model for a single-wafer reactor. significant differences in step coverage predicted using partial pressures in the feed stream and partial pressures at the wafer surface were observed. Step coverage differences between the wafer center and the wafer edge were also significant under the operating conditions used in this study. Uniformi-ties of interwafer and intrafeature step coverages inceased as either the wafer temperature or the partial pressure ratio of dichlorosilane to tungsten silicide in the feed was decreased.
Keywords: Deposition Uniformity; Step Converage; Chemical Vapor Deposition; Single-Wafer Reactor; Tungsten Silicide
[References]
  1. Bullis WM, O'Mara WC, Solid State Technol., 36(4), 59, 1993
  2. Cale TS, Park JH, Gandy TH, Raupp GB, Jain MK, Chem. Eng. Commun., 119, 197, 1993
  3. Cale TS, Park JH, Raupp GB, Jain MK, Rogers BR, "The Inherently Transient Nature of Deposition Processes," in Advanced Metallization for ULSI Applications, Rana, V.V.S., Joshi, R.V. and Ohdomari, I., eds., MRS, Pittsburg, p. 93, 1992
  4. Cale TS, Raupp GB, Park JH, Jain MK, Rogers BR, "The Inherently Transient Nature of Deposition Processes," in Proceedings of First International Conference of Transport Phenomena in Processing, Guceri, S., ed., Technomic Publishing Co., p. 127, 1992
  5. Cale TS, Park JH, Raupp GB, Jain MK, "Impacts of Temperature and Reactant Flow Rate Transients on LPCVD Tungsten Silicide Film Properties," in Rapid Thermal and Integrated Processing, Mat. Res. Soc. Symp. Proc., Vol. 224, MRS, p. 171, 1991
  6. Cale TS, Gandy TH, Raupp GB, J. Vac. Sci. Technol. A, 9(3), 524, 1991
  7. Cale TS, Jain MK, Raupp GB, J. Electrochem. Soc., 137(5), 1526, 1990
  8. Cale TS, Raupp GB, J. Vac. Sci. Technol. B, 8(6), 1242, 1990
  9. Campbell SA, Knutson KL, Ahn KH, Leighton JD, Liu B, "Gas Flow Patterns and Thermal Uniformity in Rapid Thermal Processing Equipment," IEEe IEDM Technical Digest, p. 921, 1990
  10. Chase MW, Davies CA, Downey JR, Frurip DJ, McDonald RA, Syverud AN, J. Phys. Chem. Ref. Data, 14, 1985
  11. Chatterjee S, Trachtenberg I, Edgar TF, J. Electrochem. Soc., 139(12), 3682, 1992
  12. Chatterjee S, McConica CM, J. Electrochem. Soc., 137(1), 328, 1990
  13. Dobkin DM, J. Electrochem. Soc., 139, 2573, 1992
  14. Economou DJ, Alkire RC, J. Electrochem. Soc., 135(11), 2786, 1988
  15. Finlayson BA, "Nonlinear Analysis in Chemical Engineering," McGraw-Hill Inc., New York, 1980
  16. Fitzjohn JL, Holstein WL, J. Electrochem. Soc., 137(2), 699, 1990
  17. Hirschfelder JO, Curtiss CF, Bird RB, "Molecular Theory of Gases and Liquids," John Wiley & Sons, Inc., 1954
  18. Islamraja MM, Capelli MA, McVittie JP, Saraswat KC, J. Appl. Phys., 70(11), 7137, 1991
  19. Jain MK, Cale TS, Gandy TH, J. Electrochem. Soc., 140(1), 242, 1993
  20. Jasinski TJ, Kang SS, "Application of Numerical Modeling for CVD Simulation Test Case: Blanket Tungsten Deposition Uniformity," Tungsten and Other Advanced Metals for ULSI Applications in 1990, Smith, g.C. and Blumenthal, R., eds., MRS, Pittsburg, p. 129, 1991
  21. Jenkinson JP, Pollard R, J. Electrochem. Soc., 131(12), 2911, 1984
  22. Kleijn CR, vander Meer H, Hoogendoorn CJ, J. Electrochem. Soc., 136(11), 3423, 1989
  23. Kleijn CR, Hoogendoorn CJ, Hasper A, Holleman J, Middelhock J, J. Electrochem. Soc., 138(2), 509, 1991
  24. Kleijn CR, J. Electrochem. Soc., 138(7), 2190, 1991
  25. Lam DK, Koch GR, Solid State Technol., 23(9), 99, 1980
  26. McConica CM, Chatterjee S, Sivaram S, "Step Coverage Prediction During Blanket LPCVD Tungsten Deposition from Hydrogen, Silane and Tungsten Hexafluoride," in Firth Annual IEEe VLSI Multilevel Interconnection Conference, Santa Clara, CA, June, p. 268, 1988
  27. Moslehi MM, Chapman RA, Wong M, Paranjpe A, Najm HN, Kuehne J, Yeakley RL, Davis CJ, IEEE Trans. Electron Devices, ED39(1), 4, 1992
  28. Netlib Contains Many Source Codes Served by AT&T Bell Labs in Murray Hill, NJ, U.S.A.
  29. Pankratz LB, "Thermodynamics Properties of Halides," U.S. Bureau of Mines, Bulletin 674, 1984
  30. Park SK, Economou DJ, J. Electrochem. Soc., 137(8), 2624, 1990
  31. Park JH, "Simulation of Low Pressure Chemical Vapor Deposition Using Combined Reactor Scale and Feature Scale Models," Ph.D. Dissertation, Arizone State University, U.S.A., 1992
  32. Raupp GB, Cale TS, Chem. Mater., 1, 207, 1989
  33. Raupp GB, Cale TS, Jain MK, Rogers B, Srinivas D, Thin Solid Films, 193, 234, 1990
  34. Reid RC, Prausnitz JM, Poling BE, "The Properties of Gases & Liquids," McGraw-Hill, Inc., New York, 1988
  35. Riely PE, Clark TE, J. Electrochem. Soc., 138(10), 3008, 1991
  36. Rode EJ, Schmitz JEJ, "Study of Reactor Design by Computational Fluid Dynamics," in Advanced Metallization for ULSI Applications, Rana, S., Joshi, R.V. and Ohdomari, I, eds., MRS, Pittsburg, p. 105, 1992
  37. Suwondo E, Pibouleau L, Domenech S, Riba JP, Chem. Eng. Commun., 102, 161, 1991
  38. Svehla RA, "Estimated Viscosities and Thermal Conductivities of Gases at High Temperatures," NASA Tech. Report R-132, Lewis Res. Center, Cleveland, OH, 1962
  39. Ulacia F, Howell JI, Krner H, Werner C, Appl. Surf. Sci., 38, 370, 1989
  40. Wong F, Solid State Technol., 32(10), 53, 1989
[Cited By]
  1. Park JH, Korean Journal of Chemical Engineering, 19(3), 391, 2002
  2. Park JH, Journal of Industrial and Engineering Chemistry, 2(2), 171, 1996
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