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Issue
Korean Journal of Chemical Engineering,
Vol.12, No.1, 1-11, 1995
CHEMICAL VAPOR DEPOSITION OF ALUMINUM FOR ULSI APPLICATIONS
Rhee SW
Aluminum has been used widely as a conducting material in the fabrication of integrated circuits, and chemical vapor deposition process for Al has been actively investigated for the application in ultra large scale integration. In this review, various precursors, mainly alkyl aluminum and alane compounds, and reaction mechanisms of these precursors in Al CVD are described. Epitaxial growth and selectivity of the deposition are also discussed. In addition to thermal reactions, reactions, plasma and photochemical reactions are also briefly described.
Keywords: Chemical Vapor Deposition (CVD) of Aluminum; Aluminum Thin Film; Selective Deposition; Metal Organic CVD
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[Cited By]
  1. Park SJ, Han KJ, Choi YY, Journal of the Korean Industrial and Engineering Chemistry, 15(7), 791, 2004
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