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Issue
Korean Journal of Chemical Engineering,
Vol.9, No.1, 8-15, 1992
SIMULATION OF SILICON FILM GROWTH BY SILANE DECOMPOSITION AT LOW PRESSURES AND TEMPERATURES
Lee JH, Moon SH, Rhee SW
Silicon film deposition by silane decomposition in LPCVD(Low Pressure Chemical Vapor Deposition) process has been simulated by numerical computation of the governing transport and reaction equations, assuming that the rate of silane decomposition in the gas phase controls the overall film growth rate. The film growth rate and the film uniformity increase with the reactant flow rate when the flow rate is relatively low, but they decrease at higher flow rates due to the negative effect of the reduced reaction time in the reactor. Accordingly, the film deposition process is optimized by controlling the reactant flow rate so that the position of the maximum SiH4-decomposition rate in the gas phase is located above the substrate region. With a larger degree of the substrate tilting, the growth rate decreases but the film uniformity is improved. The film uniformity is also improved when the pressure is low.
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