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Issue
Korean Journal of Chemical Engineering,
Vol.25, No.5, 1184-1189, 2008
Epitaxial growth of GaN on (0001) Al2O3 via solution-cast seed layer formation process using Ga(mDTC)3
Kim DH, Farva U, Jung WS, Kim EJ, Park C
This paper reports an alternative method for the growth of GaN epitaxial layer on (0001) Al2O3 substrate by hot-wall vapor phase epitaxy technique. Tris (N,N-dimethyldithiocarbamato)-gallium (III), Ga(mDTC)3 was introduced as a precursor material for the seed layer formation in the growth of GaN. Optimal growth conditions with seed layers formed by the Ga(mDTC)3 concentration of 0.047 mol/L were identified: Growth temperature was found to be 850 ℃, and optimal distance between the reactant outlet and substrate was determined to be 12.5 cm. Characterization results showed that this growth method produce high-crystallinity GaN epitaxial layers at a relatively lower growth temperature compared to the existing growth techniques and simplify the growth process.
Keywords: Hot-wall Vapor Phase Epitaxy; Gallium Nitride; Ga(mDTC)3 Precursor; Solution Casting; Seed Layer Formation
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[Cited By]
  1. Hoang KN, Kim HT, Jun W, Park C, Korean Journal of Chemical Engineering, 29(1), 130, 2012
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