Submicron patterning of Ta, NiFe, and Pac-man type magnetic elements of Ta/NiFe/Ta has been carried out in inductively coupled plasmas (ICPs) of Cl2/Ar. Etch behavior was quite dependent on materials and plasma parameters. An ion-enhanced etch mechanism played a critical role for desorption of metal chloride etch products. Sidewall contamination with etch products was observed at a higher Cl2 concentration (>50%). Compared to relatively damaged surfaces and profiles by the ion milling method, the ICP etching technique produced clear, smooth, and well-defined Pac-man type elements.