To study the transient point defect distribution in Czochralski-grown silicon single crystals, a continuum model of point defect dynamics to predict the concentration of interstitial and vacancy is established by estimating expressions for the thermo-physical properties of point defects and the point defect distribution in silicon crystals. It is well known that the concentration of intrinsic point defects in growing silicon crystals is a function of the crystal pull rate (V) and the temperature gradient (G) at the solidification interface inside the crystal, and steady state predictions from point defect dynamics are well agreed with experiment. In this study, finite element simulations have been performed for the growth halt experiment with 150 mm silicon single crystals to study the transient behavior of intrinsic point defects. It has been demonstrated that predicted point defect distributions are in good agreement with experimental results.