| Issue |
| Total 10 articles [ 키워드: Tungsten ] |
| No. | Article |
| 1 |
Korean Journal of Chemical Engineering, 34 (8), pp.2162-2168 (2017) Facile synthesis of tungsten carbide-carbon composites for oxygen reduction reaction Sohn Y, Jung HJY, Kim P |
| 2 |
Korean Journal of Chemical Engineering, 33 (1), pp.140-146 (2016) Ethylene and mixed 2-butene cis/trans isomers metathesis: Influence of lanthanum as a second metal on the WO3/SiO2 catalysts Poovarawan N, Thitiapichart T, Suriye K, et al. |
| 3 |
Korean Journal of Chemical Engineering, 31 (6), pp.961-971 (2014) Tungsten oxides supported on nano-size zirconia for cyclic production of syngas and hydrogen by redox operations Kwak JH, Han GY, Bae JW, et al. |
| 4 |
Korean Journal of Chemical Engineering, 30 (10), pp.1833-1835 (2013) Hydrothermal synthesis of one-dimensional tungsten oxide nanostructures using cobalt ammonium sulfate as a structure-directing agent Rajagopal S, Lee HM, Lee K, et al. |
| 5 |
Korean Journal of Chemical Engineering, 29 (12), pp.1695-1699 (2012) Effect of acid type in WOX clusters on the esterification of ethanol with acetic acid Park JR, Kwak BK, Park DS, et al. |
| 6 |
Korean Journal of Chemical Engineering, 26 (3), pp.654-659 (2009) Oxidation of cyclopentene catalyzed by tungsten-substituted molybdophosphoric acids Xue J, Yin H, Li H, et al. |
| 7 |
Korean Journal of Chemical Engineering, 26 (1), pp.261-264 (2009) Synthesis of nanometer sized Bi2WO6s by a hydrothermal method and their conductivities Kim DY, Kim SJ, Yeo MK, et al. |
| 8 |
Korean Journal of Chemical Engineering, 19 (3), pp.391-399 (2002) Mathematical Modeling for Chemical Vapor Deposition in a Single-Wafer Reactor: Application to Low-Pressure Deposition of Tungsten Park JH |
| 9 |
Korean Journal of Chemical Engineering, 16 (5), pp.608-613 (1999) Effect of the Fluorine-Addition Order on the Hydrodesulfurization Activity of Fluorinated NiW/Al2O3 Catalysts Kwak C, Moon SH |
| 10 |
Korean Journal of Chemical Engineering, 13 (2), pp.105-114 (1996) DEPOSITION UNIFORMITIES ON A WAFER AND IN A TRENCH FOR TUNGSTEN SILICIDE LPCVD IN A SINGLE-WAFER REACTOR Park JH |
