| Issue |
| Total 8 articles [ 키워드: Plasma Etching ] |
| No. | Article |
| 1 |
Korean Journal of Chemical Engineering, 39 (1), pp.63-68 (2022) Plasma etching of SiO2 contact hole using perfluoropropyl vinyl ether and perfluoroisopropyl vinyl ether You SH, Kim JH, Kim CK |
| 2 |
Korean Journal of Chemical Engineering, 35 (6), pp.1348-1353 (2018) Damage to amorphous indium-gallium-zinc-oxide thin film transistors under Cl2 and BCl3 plasma Choi JH, Kim SJ, Kim HT, et al. |
| 3 |
Korean Journal of Chemical Engineering, 25 (3), pp.593-598 (2008) Influence of the silicon surface treatment by plasma etching and scratching on the nucleation of diamond grown in HFCVD - a comparative study Ansari SG, Dar MA, Kim YS, et al. |
| 4 |
Korean Journal of Chemical Engineering, 25 (1), pp.13-18 (2008) Multi-way principal component analysis for the endpoint detection of the metal etch process using the whole optical emission spectra Han K, Park KJ, Chae H, et al. |
| 5 |
Korean Journal of Chemical Engineering, 21 (6), pp.1235-1239 (2004) Inductively Coupled Plasma Etching of Ta, Co, Fe, NiFe, NiFeCo, and MnNi with Cl2/Ar Discharges Park HJ, Ra HW, Song KS, et al. |
| 6 |
Korean Journal of Chemical Engineering, 20 (6), pp.1131-1133 (2003) Thickness of a Modified Surface Layer Formed in a Silsesquioxane-based Low-k Material During Etching in a Fluorocarbon Plasma Hwang SW, Lee GR, Min JH, et al. |
| 7 |
Korean Journal of Chemical Engineering, 20 (6), pp.1138-1141 (2003) Nanometer-Sized Patterning of Polysilicon Thin Films by High Density Plasma Etching Using Cl2 and HBr Gases Song YS, Chung CW |
| 8 |
Korean Journal of Chemical Engineering, 19 (3), pp.524-528 (2002) Inductively Coupled Plasma Etching of Pb(ZrxTi1- x)O3 Thin Films in Cl2/C2F6/Ar and HBr/Ar Plasmas Chung CW, Byun YH, Kim HI |
