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Search / Korean Journal of Chemical Engineering
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Korean Chemical Engineering Research, Vol.49, No.5, 600-604, 2011
저온 용액공정을 이용한 인듐갈륨 산화물(IGO) 박막트랜지스터 제조 및 특성 연구
A Study on Indium Gallium Oxide Thin Film Transistors prepared by a Solution-based Deposition Method
본 연구에서는 박막 트랜지스터(TFTs)에 사용 가능한 Indium Gallium 산화물(IGO) 박막을 스핀코팅을 이용한 화학적 용액공정을 사용하여 SiO2/Si 기판 위에 증착시켰다. 또한 IGO 박막을 증착한 후에 이루어지는 열처리 온도가 박막의 결정화에 미치는 영향과 이들의 전기적 특성이 조사되었다. 스핀코팅법에 의한 IGO 박막을 증착하기 위해 사용된 In과 Ga의 비율은 2:1로 고정하였으며, 박막의 열처리 온도는 300~600 ℃의 범위에서 변화시켰다. 공기 중에서 300 ℃와 600 ℃에서 1시간 동안 열처리한 IGO 박막을 사용하여 제조한 박막 트랜지스터의 전류 이동도(field effect mobility)는 각각 0.34와 3.83 cm2/V·s로서 양호한 전자소자의 성능을 보였다. 또한 on/off 전류비(current ratio)는 105 이상이었으며, IGO 박막의 평균 투과율은 98%이었다.
Solution processed IGO thin films were prepared using a general chemical solution route by spin coating. The effect of the annealing temperature of IGO thin films based on the ratio of 2:1 of indium to gallium on crystallization was investigated with varying annealing temperature from 300 ℃ to 600 ℃. The electronic device characteristic of IGO thin film was investigated. The solution-processed IGO TFTs annealed at 300 and 600 ℃ in air for 1 h exhibited good electronic performances with field effect mobilities as high as 0.34 and 3.83 cm2/V·s, respectively. The on/off ratio of the IGO TFT in this work was 105 with 98% transmittance.
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