Remote plasma chemical vapor deposition(RPCVD) was used for the deposition of silicon oxide film and the effect of the operating variables, such as plasma power, deposition temperature, and the partial pressure of the reactants was investigated. The deposition rate was dependent on the plasma power rather than on the deposition temperature. With the plasma power increased, the deposition rate and the incorporation of the hydrogen related bonding were increased, which degraded the film properties. The increase of the deposition temperature reduced the film porosity. The increase of the partial pressure of reactants led to the powder formation from the gas phase reaction which lowered the film growth rate but increased film porosity and surface roughness were significantly increased. Si-rich film was deposited when N₂O/SiH₄ ratio was smaller than 4 and the stoichiometry of silicon oxide film did not vary from O/Si=1.9 with N₂O/SiH₄ ratio greater than 4.