Print: | ISSN 0304-128X |
Online: | ISSN 2233-9558 |
HWAHAK KONGHAK,
Vol.34, No.1, 111-116, 1996 Ga로 변형된 HASM-5 촉매상에서 n-헥산의 방향족화 반응
Aromatization of n-Hexane over HZSM-5 Type Catalysts Modified with Gallium
Ga를 HZSM-5에 함침시켜 공기 중에서 소성하게 되면 Ga는 가장 안정한 산화상태인 Ga2O3로 전환되므로 Ga2O3를 HZSM-5와 물리적으로 혼합한 후 n-헥산의 전환반응에 적용하였다. 반응결과를 Ga 함침촉매와 비교하고 TEM 및 TPD 분석결과와 연관지어 HZSM-5의 산점과 Ga의 작용점 사이의 관계를 검토하였다. 또한 Ga를 구조격자 내부에 도입하여 gallosilicate를 제조한 후 방향족 화합물에 대한 선택도를 조사하였으며 소성온도 및 Ga 함침에 의한 영향을 조사하고 촉매의 특성분석 결과와 연관지어 방향족화 반응에 대한 활성점을 규명하였다.
Since the species Ga in Ga/HZSM-5 would be converted to Ga2O3 and applied to the conversion of n-hexane. The experimen-tal results of the catalytic reaction was compared with those over Ga/HZSM-5 catalyst. The mixture catalyst was also characterized by TEM and TPD analysis. These results were combined together to elucidate the relationship between the acid sites of HZSM-5 and active gallium species. Also, gallosilicate was synthesized by introducing Ga into the framework and applied to the conversion of n-hexane. Investigated here were the BTX selectivity, the influence of the calcination temperature and the effect of Ga-impregnation. This information was then correlated with the catalytic characteristics of gallosilicate to examine the active site for aromatization reaction.
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