TiAlN thin films were deposited at room temperature by varying nitrogen flow rate, dc power and deposition pressure by dc magnetron reactive sputtering. The deposition rate and electrical resistivity of the deposited films were investigated and x-ray diffraction(XRD) was used to examine crystalline structure and crystallinity of the film. Surface morphology and grain shape of the deposited films were observed by using field emission scanning electron microscopy(FESEM). The deposition rate was no noticeable variation for the change of deposition pressure but it was a little decrease with increasing N2 flow rate and was proportionally increased with increasing dc power. Electrical resistivity was constant with respect to the change of N2 flow rate but it was decreased as a dc power increased and increased as a deposition pressure increased.