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Search / Korean Journal of Chemical Engineering
HWAHAK KONGHAK,
Vol.32, No.4, 525-532, 1994
SnO2 후막소자의 감도특성에 미치는 SiO2의 영향
Effect of SiO2 on Sensing Characteristics of SnO2-Based Thick Film Devices
손종락, 조성국, 박효덕, 이덕동
짐적법, sputtering법 및 분말첨가법으로 SiO2가 첨가된 SuO2/Al2O3/Nb2O5후막소자를 제조하고 CH3CN 증기에 대한 감지특성을 연구하였다. 이 중에서 Si(C2H5O)4 용액의 침적법으로 제조된 소자가 가장 좋은 감도와 선택성을 나타내었다. 적외선 스펙트라를 분석한 결과 SiO2가 첨가되지 않은 SnO2/Al2O3/Nb2O5 후막소자상에서의 CH3-CN의 산화반응에 의한 생성물은 주로 CO2, H2O 및 NH3였으며 SiO2가 첨가된 SnO2/Al2O3/Nb2O5 소자상에서는 CO2,H2O, N2O, HNO3 및 HNO2가 관찰되었다. CH3CN의 산화반응으로 생성된 질소화합물의 존재로 SiO2가 첨가된 후막소자는 CH3CN 증가에 대하여 높은 선택성과 부감용을 나타내었다. Nb2O5의 최적 첨가량은 1.0wt%이었으며 최적 동작온도는 300℃였다.
The SnO2/Al2O3/Nb2O5 thick film devices added with SiO2 were fabricated by dipping, sputtering and addition of SiO2 powder, and the sensing characteristics to CH3CN vapor was investigated. Among them, the device fabricated by dipping of Si(C2H5)4 solution showed high sensitivity and selectivity to CH3CN vapor. From the results of infrared spectra, the products formed by the oxidation reaction of CH3CN on the SnO2/Al2O3/Nb2O5 thick film devices without addition of SiO2 were found to be mainly CO2, H2O and NH3, while on the SnO2/Al2O3/Nb2O5 added with SiO2, products such as CO2, H2O, N2O, HNO3 and HNO2 were observed. The thick film devices added with SiO2 showed high selectivity and negative sensitivity to CH3CN vapor by means of the presence of nitrogen compounds produced through the oxidation reaction of CH3CN. Optimum amount of Nb2O5 and operating temperature were 1.0wt% and 300℃, respectively.
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[Cited By]
  1. Jun HK, Kim JC, HWAHAK KONGHAK, 35(2), 307, 1997
참고문헌정보(참고문헌, 인용문헌)는 화학공학소재연구정보센터에 의해 제공되고 있습니다.