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HWAHAK KONGHAK,
Vol.29, No.5, 589-595, 1991
Vol.29, No.5, 589-595, 1991
스퍼터 증착된 LaF3 박막의 구조 및 산소검지 특성
Structure and Oxygen Sensing Properties of LaF3 Thin Films Deposited by rf-magnetron Sputtering
고체전해질의 일종인 LaF3의 박막을 아르곤 기체를 이용한 rf-magnetron 스퍼터링 방법으로 증작ㆍ제조하고 그 결정구조와 산소검지 특성에 관하여 고찰하였다. LaF3 박막은 F-이온 전도성 고체 전해질이며 검지전극으로는 백금혹을 사용하였다. 기준전극으로는 역시 아르곤 기체를 이용하여 동시 스퍼터링에 의하여 증착된 Sn-SnF2 박막을 사용하였다. Electron diffraction 분석에 의한 LaF3 박막의 구조는 미세결정 구조임을 알 수 있었다. 기준전극에 대한 상대적인 검지전극의 전위는 증류수중에 존재하는 용존산소의 농도에 따라서 지수함수적으로 변하였으며 용존산소에 대한 검지기구는 한 개의 전자이동이 일어나는 전극반응에 기초하는 것으로 나타났다.
Lanthanum fluoride thin films were prepared by rf-magnetron sputtering method in argon gas and their crystal structures and oxygen sensing properties were investigated. The thin film of LaF3 was used as a F- ion conducting solid electrolyte and the sensing electrode was made of platinum black. The Sn-SnF2 film co-sputtered by rf-magnetron sputtering in argon was used as a reference electrode. The struc-ture of LaF3 was found to be microcrystalline according to the electron diffraction analysis. The potential of sensing electrode relative to that of reference electrode was changed logarithmically by dissolved oxygen concentration in distilled water and its sensing mechanism was based on the electrode reaction of one electron transfer.
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