Experiments of silicon CVD（Chemical Vapor Deposition） using trichlorosilane and hydrogen gas mixture were conducted to determine the deposition rate and power consumption for the bell-jar type reactor used for semiconductor grade polycrystalline silicon manufacture. We studied the effects of reaction temperature, flow rate of reactant gas, and trichlorosilane concentration on the silicon deposition rate experimentally.
An empirical equation to predict the silicon deposition rate was proposed and was compared with experimental data. On the other hand, a model equation to predict power consumption of the bell-jar type reactor was derived from the deposition rate equation and the heat saving equation in the reactor. Predictions by this model were agreed well with experimental data.