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HWAHAK KONGHAK,
Vol.19, No.2, 139-146, 1981
Vol.19, No.2, 139-146, 1981
H2-H2O 및 H2-N2 분위기하에서 Si3N4-Al계의 반응
Reaction of the System Si3N4-Al in H2-H2O and H2-N2 Atmospheres
Si3N4 분말에 Al분말을 가하여 1,300 ℃온도와 H2-H2O（Po2=2.37×10-14atm） 및 H2-N2(1 : 1) 분위기 하에서 반응시켜 생성물을 얻었다.
X선 회절 분석결과 β'Si3N4 Si2ON2, X-phase가 관찰되었으며 기공률은 15 %이하까지 얻을 수 있었다. 또, H2-N2 분위기에서 생성한 β'Si3N4 보다 H2-H2O 분위기에서 얻은 것이 더욱 산화 저항성이 크다는 것을 알 수 있었다.
X선 회절 분석결과 β'Si3N4 Si2ON2, X-phase가 관찰되었으며 기공률은 15 %이하까지 얻을 수 있었다. 또, H2-N2 분위기에서 생성한 β'Si3N4 보다 H2-H2O 분위기에서 얻은 것이 더욱 산화 저항성이 크다는 것을 알 수 있었다.
The pellets of the Si3N4-Al system were heated at 1,300 ℃ in the atmospheres of H2-H2O（Po2=2.37×10-14 atm） and H2-N2(1 : 1) systems, respectively.
X-ray diffraction analysis showed that β'-Si3N4, Si2ON2 and X-phase were formed after the reaction at 1,300℃ in both the atmospheres. The porosities of the heated specimens were measured as low as 15%
It was observed that the β'-Si3N4, formed in the H2-H2O suystem is more stable in the oxidizing atmosphere than that formed in the H2-N2 system.
X-ray diffraction analysis showed that β'-Si3N4, Si2ON2 and X-phase were formed after the reaction at 1,300℃ in both the atmospheres. The porosities of the heated specimens were measured as low as 15%
It was observed that the β'-Si3N4, formed in the H2-H2O suystem is more stable in the oxidizing atmosphere than that formed in the H2-N2 system.
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