ZSM-5 crystals grew on the surface of α-SiC and β-SiC particles by hydrothermal synthesis method. SiC particles which were > 50 μm of size were used, and oxide layer were developed on the surface of the particles to induce growth of ZSM-5 from the surface. Then, synthesis time and temperature condition were considered growing ZSM-5. In this study, oxide layer was formed on β-SiC at 900 °C in air, and it was controlled to grow ZSM-5 grew from the β-SiC surface with 150 °C synthesis condition. This is due to Si-O-Si or Si-O-Al bond, which is basic framework of ZSM-5 can be easily formed, from the silicon oxide film on the surface of β-SiC. When the synthesis temperature was 200 °C, the size of ZSM-5 was increased, and it covered much area of the SiC surface with better crystal shapes with longer synthesis time.